Please use this identifier to cite or link to this item:
http://dx.doi.org/10.25673/4052Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.referee | Dadgar, Armin | |
| dc.contributor.author | Ravash, Roghaiyeh | |
| dc.date.accessioned | 2018-09-24T17:57:19Z | - |
| dc.date.available | 2018-09-24T17:57:19Z | - |
| dc.date.issued | 2014 | |
| dc.identifier.uri | https://opendata.uni-halle.de//handle/1981185920/11784 | - |
| dc.identifier.uri | http://dx.doi.org/10.25673/4052 | - |
| dc.description.statementofresponsibility | von Roghaiyeh Ravash | |
| dc.format.extent | Online Ressource (PDF-Datei) | |
| dc.language.iso | eng | |
| dc.publisher | Universitätsbibl. | |
| dc.publisher | Otto von Guericke University Library, Magdeburg, Germany | |
| dc.subject.ddc | 530 | - |
| dc.title | Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy | |
| dcterms.type | Hochschulschrift | |
| dc.type | PhDThesis | - |
| dc.identifier.urn | urn:nbn:de:gbv:ma9:1-4514 | |
| local.publisher.universityOrInstitution | Otto-von-Guericke-Universität Magdeburg | |
| local.openaccess | true | - |
| Appears in Collections: | Fakultät für Naturwissenschaften | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Roghaiyeh_Ravash_Dissertation.pdf | 8.3 MB | Adobe PDF |  View/Open |